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B06N03 SUT390EF AFB0912M 10120 MM1365 STU432S NTE29 AD524S
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  %? absolute maxim um rating s t a = 2 5 ! paramet er sym bol rating unit peak repetitive reve rse volt age w orking peak rever se v oltage dc block ing voltage v rmm v rw m v dc 600 v rm s rever se v oltage v rms 420 v avera ge forw ard re ct ified curre nt on glass -epo x y p.c.b . (note 1) 0.5 on alum inum s ubstrate (note 2) 0.8 non -re petitive peak forw ard surg e curr ent, 8.3 m s single half-sine-w ave superim posed on rated load (jedec m ethod) i fsm 35 a forw ard voltage (pe r elem ent) @ i f = 0.4a v f 1.0 v rev erse curr ent(pe r elem ent) @ rated v r @ t a = 25 ! @ t a = 125 ! i r 5 100 ?a rating for fusing (t < 8.3m s) i 2 t 5.0 a 2 s typical total capacitance (per elem ent) (no te 3) c j 13 pf typical thermal resist ance, j unction to am bient (note 1) r ?ja 85 ! /w oper ating and storage temperature ra nge t j , t stg -55 to +150 ! i o a %? features %? glass pass ivated chip junct ions %? high surge current c apab ility %? ideal f or printed circuit board 1 4 32 1. + 2. ac in 3. ac in 4. - unit: mm mbs (1.3 x 1.3mm) solder pad note 1. on glasse poxy p.c.b. mounted on 0.05x0.05" (1.3x1.3mm) pads on aluminum substrate p.c.b. with an area of 0.8"x0.8" (20x20mm) mounted on 0.05x0.05" 2. 3.measured at 1.0 mhz and applied reverse voltage of 4.0 v MB6S marking marking MB6S product specification 1 of 2 sales@twtysemi.com http://www.twtysemi.com 4008-318-123
typical characteristics fig.1- derating curve for output rectified current 60 160 number of cycles) fig.2-maximum non-repetitive peak forward surge current per leg fig.3- typical forward voltage characteristics per leg instantaneous for ward current . (a) fig.4- typical reverse leakage characteristics per leg instantaneous reverse current .( a)  leakage 140 100 80 20 0 5.0 0.2 1 100 10 1 10 0.1 0.01 10 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 02040 60 80 100 instantaneous forward voltage. (v) percent of rated peak reverse voltage. (%) tj=25 c 0 tj=125 c 0 ta=40 c single half sine-wave (jedec method) f=60 hz f=50 hz 1 cycle ambient temperature. ( c) o peak for ward surge current . (a) average for ward current . (a) rectified 10 15 20 25 30 35 100 0.1 0.01 0.1 0 0.3 0.4 0.5 0.6 0.7 0.8 0 40 120 glass epoxy p. c . b resistive or inductive load fig.5- typical junction capactitance per leg reverse voltage. (v) 0.1 1 10 100 200 0 5.0 10 15 20 25 30 junction cap acitance ( ) pf tj=150 c 0 tj=25 c 0 tj=25 c pulse width=300 s 1% duty cycle  tj=25 c f=1mhz vsig = 50mvp-p aluminum substrate MB6S product specification 2 of 2 sales@twtysemi.com http://www.twtysemi.com 4008-318-123


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